作者单位
摘要
1 华中科技大学 武汉光电国家研究中心&光学与电子信息学院,湖北 武汉 430074
2 都柏林圣三一学院 物理学院,爱尔兰 都柏林
基于光学微谐振腔的自参考耗散克尔孤子(Dissipative Kerr Solitons, DKSs)有广泛的应用,如频率合成器、相干通信、天文光谱仪校准、精密测量、光学时钟、双梳光谱学等。倍频程DKS已在氮化硅和铌酸锂微谐振腔中实现,笔者提出了一种在氮化铝(AlN)微环谐振腔中通过单一泵浦直接产生倍频程DKS的简单方案。通过将两个谐振频率相近的模式TE00 和TE10分别作为泵浦谐振和辅助谐振模式,红失谐侧的辅助模式TE10可以有效地平衡孤子形成过程中的热拖曳效应。慢速扫描泵浦光波长可获得稳定的倍频程展宽的孤子梳,带宽为1100~2300 nm,孤子存在范围最大为10.4 GHz(83 pm)。这是首次在AlN平台上获得倍频程展宽的克尔光孤子。该方案在单一泵浦源下就可以获得稳定的倍频程光孤子以及宽的孤子访问窗口,不同于其他方案需要额外引入复杂的控制手段和设备。
微环谐振腔 四波混频 倍频程光频梳 光孤子 microring resonator four-wave mixing octave-spanning optical frequency comb optical soliton 
红外与激光工程
2022, 51(5): 20220311
作者单位
摘要
Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China
Indium gallium nitride (InGaN) based blue light-emitting diodes (LEDs) suffer from insufficient crystal quality and serious efficiency droop in large forward current. In this paper, the InGaN-based blue LEDs are grown on sputtered aluminum nitride (AlN) films to improve the device light power and weaken the efficiency droop. The effects of oxygen flow rate on the sputtering of AlN films on sapphire and device performance of blue LEDs are studied in detail. The mechanism of external quantum efficiency improvement is related to the change of V-pits density in multiple quantum wells. The external quantum efficiency of 66% and 3-Voperating voltage are measured at a 40-mA forward current of with the optimal oxygen flow rate of 4 SCCM.
light-emitting diode (LED) sputtered aluminum nitride (AlN) physical vapor deposition (PVD) metalorganic chemical vapor deposition (MOCVD) 
Frontiers of Optoelectronics
2021, 14(4): 507–512
Author Affiliations
Abstract
1 School of Physics, CRANN and AMBER, Trinity College Dublin, Dublin 2, Ireland
2 Wuhan National Laboratory for Optoelectronics, and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China
3 e-mail: jdonegan@tcd.ie
4 e-mail: guow@mail.hust.edu.cn
Self-referenced dissipative Kerr solitons (DKSs) based on optical microresonators offer prominent characteristics allowing for various applications from precision measurement to astronomical spectrometer calibration. To date, direct octave-spanning DKS generation has been achieved only in ultrahigh-Q silicon nitride microresonators under optimized laser tuning speed or bi-directional tuning. Here we propose a simple method to easily access the octave-spanning DKS in an aluminum nitride (AlN) microresonator. In the design, two modes that belong to different families but with the same polarization are nearly degenerate and act as a pump and an auxiliary resonance, respectively. The presence of the auxiliary resonance can balance the thermal dragging effect, crucially simplifying the DKS generation with a single pump and leading to an enhanced soliton access window. We experimentally demonstrate the long-lived DKS operation with a record single-soliton step (10.4 GHz or 83 pm) and an octave-spanning bandwidth (1100–2300 nm) through adiabatic pump tuning. Our scheme also allows for direct creation of the DKS state with high probability and without elaborate wavelength or power schemes being required to stabilize the soliton behavior.
Photonics Research
2021, 9(7): 07001351
Author Affiliations
Abstract
1 School of Microelectronics, University of Science and Technology of China, Hefei 230026, China
2 Department of Electrical and Computer Engineering, University of California San Diego, La Jolla, CA 92037, USA
3 Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China
The AlGaN-based deep ultraviolet (DUV) light-emitting diode (LED) is an alternative DUV light source to replace traditional mercury-based lamps. However, the state-of-the-art DUV LEDs currently exhibit poor wall-plug efficiency and low light output power, which seriously hinder their commercialization. In this work, we design and report a tunnel-junction-cascaded (TJC) DUV LED, which enables multiple radiative recombinations within the active regions. Therefore, the light output power of the TJC-DUV LEDs is more than doubled compared to the conventional DUV LED. Correspondingly, the wall-plug efficiency of the TJC-DUV LED is also significantly boosted by 25% at 60 mA.
deep ultraviolet LED tunnel junction wall-plug efficiency AlGaN 
Chinese Optics Letters
2021, 19(8): 082503
作者单位
摘要
1 华中科技大学 武汉光电国家研究中心,湖北 武汉 430074
2 中国科学院上海技术物理研究所,上海 200083
多量子阱红外探测器是一种新型的利用子带跃迁机制的探测器件,具有非常高的设计自由度。GaN/Al(Ga)N量子阱由于大的导带带阶,超快的电子驰豫时间,超宽的红外透明区域以及高的声子能量,使得其成为继GaAs量子阱红外探测器之后又一潜在的探测材料结构。文中详细综述了国内外关于GaN基量子阱红外子带吸收及其探测器件的研究进展。首先介绍了量子阱红外探测器的工作原理及其选择定则,接着从极性GaN基多量子阱、非极性或半极性GaN基多量子阱以及纳米线结构GaN基多量子阱三个方面回顾当前GaN基多量子阱红外吸收的一些重要研究进展,包括了从近红外到远红外甚至太赫兹波段范围的各种突破。最后回顾了GaN基多量子阱红外探测器件的研究进展,包括其光电响应特性和高频响应特性,并对其未来的发展进行总结和展望。
GaN 量子阱 红外探测器 子带跃迁吸收 GaN quantum well infrared photodetector intersubband transition absorption 
红外与激光工程
2021, 50(1): 20211020
作者单位
摘要
1 Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China
2 Key Laboratory for Optoelectronics and Communication of Jiangxi Province, Jiangxi Science and Technology Normal University, Nanchang 330013, China
3 State Key Laboratory of Catalysis, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian 110623, China
4 University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100049, China
first-principles Ostwald ripening Pd TiO2(110) 
Frontiers of Optoelectronics
2020, 13(4): 409
作者单位
摘要
华中科技大学,武汉光电国家研究中心,武汉 430074
深紫外光源在杀菌消毒、生化检测、紫外固化、紫外通信等方面具有巨大的应用前景,基于AlGaN半导体的深紫外发光二极管(LED)因具有无毒、体积小、能耗低、寿命长、波长可调等优势,得到了广泛的关注和研究。经过近二十年的研究开发,AlGaN基深紫外LED无论是发光效率和器件寿命都得到了巨大的提升,已逐步开始商业化。然而,相对于GaN基蓝光LED,目前AlGaN基深紫外LED的效率仍旧非常低,还有很大的提升空间。本文首先介绍了深紫外LED的发展现状,并分析了导致器件效率低的原因。然后,分别从内量子效率、光提取效率以及电光转换效率三个方面对目前AlGaN基深紫外LED的研究状况进行了系统的回顾,总结了目前提高发光效率的各种手段和方法。最后对AlGaN基深紫外LED的未来发展进行了展望。
深紫外LED 内量子效率 光提取效率 电光转换效率 AlGaN AlGaN deep ultraviolet light emitting diode internal quantum efficiency light extraction efficiency wallplug efficiency 
人工晶体学报
2020, 49(11): 2079
作者单位
摘要
Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China
III-V nitrides metalorganic chemical vapor deposition (MOCVD) diluted magnetic semiconductors first-principles 
Frontiers of Optoelectronics
2017, 10(4): 363
作者单位
摘要
1 Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China
2 School of Physics and Information Engineering, Jianghan University, Wuhan 430056, China
In this paper, Bi2S3 nanorods were successfully synthesized via a facile one-pot hydrothermal method and characterized by X-ray diffraction, field emission scanning electron microscopy, transmission electron microscopy and X-ray photoelectron spectroscopy. Then the Bi2S3 nanorods were deposited on Au interdigital electrodes by dip-coating to fabricate photodetectors. The photoresponse properties using Bi2S3 nanorods as a representative system showed a significantly enhanced conductivity and the current-voltage (I-V) characteristic exhibited about ca. 2 orders of magnitude larger than the dark current. The response and decay time was estimated to be ~371.66 and 386 ms, respectively, indicating Bi2S3 may be an excellent candidate for high speed and high-sensitivity photoelectrical switches and light sensitive devices.
Bi2S3 Bi2S3 nanorods nanorods photoresponse property photoresponse property photodetector photodetector 
Frontiers of Optoelectronics
2015, 8(3): 282
作者单位
摘要
1 Department of Physics, Jianghan University, Wuhan 430056, China
2 Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China
ZnO nanorod GaN epilayer hexagonal pattern hydrothermal 
Frontiers of Optoelectronics
2013, 6(4): 440

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